• DocumentCode
    1078044
  • Title

    High mobility p-channel HFETs using strained Sb-based materials

  • Author

    Boos, J.B. ; Bennett, B.R. ; Papanicolaou, N.A. ; Ancona, M.G. ; Champlain, J.G. ; Bass, R. ; Shanabrook, B.V.

  • Author_Institution
    Naval Res. Lab., Washington
  • Volume
    43
  • Issue
    15
  • fYear
    2007
  • Firstpage
    834
  • Lastpage
    835
  • Abstract
    Antimonide-based p-channel HFETs with a 0.25 mum gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In0.41Ga0.59Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm2 /Vs and a sheet density of 1.6 x 1012 cm-2. The devices have a maximum DC transconductance of 133 mS/mm and an fT and fmax of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.
  • Keywords
    Hall mobility; III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; quantum well devices; Hall mobility; In0.41Ga0.59Sb; InAlSb-InGaSb; frequency 15 GHz; frequency 27 GHz; high mobility p-channel HFET; modulation-doped material; quantum well channel; size 0.25 mum;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20071305
  • Filename
    4278463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078044