• DocumentCode
    1078109
  • Title

    High power 875 nm Al-free laser diodes

  • Author

    Plano, W.E. ; Major, J.S., Jr. ; Welch, D.F.

  • Author_Institution
    SDI Inc., San Jose, CA, USA
  • Volume
    6
  • Issue
    4
  • fYear
    1994
  • fDate
    4/1/1994 12:00:00 AM
  • Firstpage
    465
  • Lastpage
    467
  • Abstract
    Data are presented on Al-free InGaAsP-GaAs single quantum well laser diodes operating at 875 nm. Total output powers in excess of 4 W are achieved from a 100 μm broad area gain-guided device. Threshold currents under 200 A/cm2 are reported for diodes operated continuous wave (cw) at room temperature (20/spl deg/C).
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor lasers; 100 mum; 20 C; 4 W; 875 nm; Al-free laser diodes; CW lasers; InGaAsP-GaAs; InGaAsP-GaAs single quantum well laser diodes; broad area gain-guided device; continuous wave; high power; room temperature; threshold currents; total output powers; Composite materials; Diode lasers; Gallium arsenide; Lattices; Optical materials; Photonics; Power generation; Surface emitting lasers; Testing; Threshold current;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.281797
  • Filename
    281797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078109