• DocumentCode
    1078112
  • Title

    A virtual self-aligned process for n-channel InP IGFET´s (or MISFET´s)

  • Author

    Tseng, W.F. ; Bark, M.L. ; Dietrich, H.B. ; Christou, A. ; Henry, R.L. ; Schmidt, W.A. ; Saks, N.S.

  • Author_Institution
    Naval Research Laboratory, Washington, D.C.
  • Volume
    2
  • Issue
    11
  • fYear
    1981
  • fDate
    11/1/1981 12:00:00 AM
  • Firstpage
    299
  • Lastpage
    301
  • Abstract
    A virtual self-aligned process for fabricating IGFET´s (or MISFET´s) has been developed. Devices fabricated on semiinsulating InP substrates using this process show: (i) square-law characteristics, (ii) an inverse-relationship between transconductance and gate length, and (iii) high surface channel electron mobilities on the order of 1000 cm2/v.sec.
  • Keywords
    Annealing; Electron mobility; Etching; Gold; Indium phosphide; Insulation; Ion implantation; Microwave devices; Resists; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1981.25441
  • Filename
    1481925
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078112