Title :
High efficiency InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition
Author :
Zhao, Hanmin ; MacDougal, Michael H. ; Frateschi, Newton C. ; Siala, Sabeur ; Dapkus, P.Daniel ; Nottenburg, Richard N.
Author_Institution :
Nat. Center for Integrated Photonic Technol., Univ. of Southern California, Los Angeles, CA, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
Low-threshold-current single-quantum-well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, a buried heterostructure laser with natural current blocking p-n-p-n junction is formed by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%) and high T/sub 0/ (150 K). High reflection coated laser (95%/95%) have CW threshold current as low as 0.28 mA.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 0.28 mA; 1 mA; 1.2 mA; 150 K; 80 percent; CW threshold current; InGaAs-GaAs; InGaAs/GaAs single-quantum-well lasers; MOCVD; buried heterostructure laser; continuous-wave operation; crystal facets; doping differences; growth rate; high external quantum efficiency; high reflection coated laser; low-threshold-current; natural current blocking p-n-p-n junction; nonplanar substrate; pulsed operation; room-temperature; single growth step; single-step metalorganic chemical vapor deposition; threshold currents; uncoated lasers; Chemical lasers; Chemical vapor deposition; Doping; Gallium arsenide; Indium gallium arsenide; Optical pulses; Optical reflection; P-n junctions; Pulsed laser deposition; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
