DocumentCode
1078130
Title
Breakdown characteristics of gallium arsenide
Author
Baliga, B.J. ; Ehle, R. ; Shealy, J.R. ; Garwacki, W. ; Garwacki, W.
Author_Institution
General Electric Company, Schenectady, NY
Volume
2
Issue
11
fYear
1981
fDate
11/1/1981 12:00:00 AM
Firstpage
302
Lastpage
304
Abstract
This paper presents a comparison of the experimentally measured breakdown characteristics of high-purity gallium arsenide epitaxial layers with the theoretical calculations reported in the literature. The experimental data has been obtained by forming gold Schottky barrier diodes on material grown by using two different liquid phase epitaxial growth techniques. Good agreement is observed between the measured data and the breakdown voltages calculated by Lee and Sze[4] for
Keywords
Avalanche breakdown; Breakdown voltage; Doping; Electric breakdown; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gold; Schottky diodes; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1981.25442
Filename
1481926
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