Title :
Effects of carrier diffusion and quantum capture on the dynamics of separated confinement single quantum well lasers operating at the first and second quantized states
Author :
Yao, J. ; Gallion, P.
Author_Institution :
Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France
fDate :
4/1/1994 12:00:00 AM
Abstract :
The effects of carrier diffusion and quantum capture on the dynamics of separated confinement heterostructure (SCH) single quantum well lasers operating at the first and second quantized states have been investigated by using three level rate equations. Lasing at the second quantized state has a smaller K factor and so a higher intrinsic maximum modulation bandwidth as compared to the first quantized state operation. Although this high intrinsic dynamics is eliminated by the process of carrier diffusion across the SCH layers, lasing at the second quantized state has still higher maximum modulation bandwidth than the first quantized state operation.<>
Keywords :
carrier density; carrier mobility; laser theory; semiconductor lasers; K factor; SCH laser diodes; carrier diffusion; first quantized state operation; high intrinsic dynamics; higher intrinsic maximum modulation bandwidth; modulation bandwidth; quantized states; quantum capture; second quantized state; separated confinement single quantum well lasers; single quantum well lasers; three level rate equations; Bandwidth; Carrier confinement; Charge carrier density; Electron optics; Equations; High speed optical techniques; Intensity modulation; Nonlinear optics; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
