Title :
Properties of Vacuum Deposited CsI(Tl) and ZnSe(Te) Scintillator Layers
Author :
Fedorov, Alexander ; Katrunov, Konstantin ; Lalayants, Alexander ; Lebedinsky, Alexey ; Shiran, Natalia ; Mateychenko, Pavel
Author_Institution :
Inst. for Scintillation Mater., NAS of Ukraine, Kharkov
fDate :
6/1/2009 12:00:00 AM
Abstract :
Examinations of the crystalline structure, morphology, luminescent properties of layers of vacuum deposited CsI(Tl) and ZnSe(Te) are presented. The dependence of these important features on deposition conditions is discussed. Optimized deposition conditions relying on the experimental results are proposed that allow thick columnar films to be obtained, while preserving the initial dopant content in the film.
Keywords :
II-VI semiconductors; caesium compounds; doping profiles; gamma-ray detection; luminescence; semiconductor doping; semiconductor thin films; solid scintillation detectors; vacuum deposition; wide band gap semiconductors; zinc compounds; CsI:Tl; ZnSeTe; crystalline morphology; crystalline structure; dopant content; luminescent properties; scintillation detectors; scintillator layers; vacuum deposition; Crystallization; Detectors; Instruments; Morphology; Optical imaging; Scanning electron microscopy; Spectroscopy; Substrates; Temperature; X-ray imaging; Scintillation detectors; thin films; vacuum technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2009640
