Theoretical investigation of gain enhancements in strained In/sub 0.35/Ga/sub 0.65/As/GaAs MQW lasers via p-doping

Author

Schönfelder, A. ; Weisser, S. ; Esquivias, I. ; Ralston, J.D. ; Rosenzweig, J.

Author_Institution

Inst. fur Hochfrequenztechnik und Quantenelektronik, Karlsruhe Univ., Germany

Volume

6

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

475

Lastpage

478

Abstract

We present a systematic theoretical investigation of the influence of p-doping on the gain characteristics of strained In/sub 0.35/Ga/sub 0.65/As/GaAs multiple-quantum-well (MQW) lasers, and compare the results with those obtained experimentally from devices with record 30 GHz modulation bandwidths. Experimentally, the combination of p-doping and strain has been found to lead to only a small increase in the differential gain, /spl part/g//spl part/n, but a large decrease in the non-linear gain coefficient, /spl epsiv/; this behaviour has been theoretically accounted for by a doping-induced decrease in the intraband relaxation time, /spl tau//sub in/. The theoretical investigations reveal that the assumption of a constant intraband relaxation time is not sufficient to describe the role of p-doping in the above devices, and highlight the importance of utilizing an appropriate lineshape function for the modeling of high speed laser modulation behaviour.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser theory; nonlinear optics; optical modulation; semiconductor lasers; 30 GHz; In/sub 0.35/Ga/sub 0.65/As/GaAs; InGaAs-GaAs; constant intraband relaxation time; high speed laser modulation behaviour; intraband relaxation time; lineshape function; modulation bandwidths; multiple-quantum-well; nonlinear gain coefficient; p-doping; semiconductor laser gain enhancement; strained MQW lasers; Bandwidth; Capacitive sensors; Frequency; Gallium arsenide; Laser modes; Laser theory; Quantum well devices; Scattering; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.281800

Filename

281800