Title :
Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer
Author :
Tsai, Ping-Hung ; Chang-Liao, Kuei-Shu ; Liu, Chu-Yung ; Wang, Tien-Ko ; Tzeng, P.J. ; Lin, C.H. ; Lee, L.S. ; Tsai, M.-J.
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
fDate :
3/1/2008 12:00:00 AM
Abstract :
Operation properties of polysilicon-oxide-nitride-oxide-silicon-type Flash device with HfAlO charge-trapping layer having various Al contents were investigated in this letter. Satisfactory performance in terms of operation speed, retention, and program/erase endurance of the Flash device is achieved with the optimal Al content of 18%-28% in the HfAlO trapping layer. In addition, high-speed operation can be attained with the combination of channel-hot-electron-injection programming and band-to-band hot hole erasing for NOR architecture applications.
Keywords :
NOR circuits; charge injection; electron traps; flash memories; hot carriers; polymer blends; semiconductor doping; HfAlO; NOR architecture; SONOS-type nonvolatile memory device; band-to-band hot hole erasing; channel-hot-electron-injection programming; charge-trapping layer; optimal aluminun doping; polysilicon-oxide-nitride-oxide-silicon-type flash device; program/erase endurance; Aluminum oxide; Atomic layer deposition; Doping; Electronics industry; Hafnium oxide; Industrial electronics; Laboratories; Nonvolatile memory; SONOS devices; Voltage; Atomic layer deposition (ALD); Flash; HfAlO; charge trapping; nonvolatile memory; polysilicon–oxide–nitride–oxide–silicon (SONOS)-type;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.915380
