Photoluminescence excitation spectroscopy of the dense exciton gas involved in the lasing transition in ZnSe epitaxial layers

Author

Kawakami, Y. ; Simpson, J. ; Prior, K.A. ; Cavenett, B.C.

Author_Institution

Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK

Volume

6

Issue

4

fYear

1994

fDate

4/1/1994 12:00:00 AM

Firstpage

505

Lastpage

508

Abstract

The lasing transition in ZnSe epitaxial layers has been investigated at 77 K. The lowest lasing threshold (I/sub th/) was achieved when the layers were resonantly excited at the photon energy of the exciton level. It was found that the exciton level at the excitation intensity just above the I/sub th/ was red-shifted by about 16 meV compared with the free exciton line (2.792 eV) under weak excitation condition. The energy difference between the exciton line and the lasing peak was about 19 meV at I=I/sub th/ and increased with increasing excitation intensity up to I=8/spl times/I/sub th/. This suggests that the stimulated emission occurs due to the inelastic exciton-exciton scattering process at this temperature.<>

Keywords

II-VI semiconductors; excitons; laser transitions; luminescence of inorganic solids; photoluminescence; semiconductor lasers; stimulated emission; zinc compounds; 19 meV; 2.792 eV; 77 K; ZnSe; ZnSe epitaxial layers; dense exciton gas; energy difference; excitation intensity; inelastic exciton-exciton scattering; lasing peak; lasing transition; lowest lasing threshold; photoluminescence excitation spectroscopy; photon energy; red-shift; resonantly excited; stimulated emission; weak excitation condition; Electromagnetic scattering; Epitaxial layers; Excitons; Particle scattering; Photoluminescence; Resonance; Spectroscopy; Stimulated emission; Temperature; Zinc compounds;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.281810

Filename

281810