Title :
Statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes including the effect of dead space
Author :
Hayat, Majeed M. ; Saleh, Bahaa E A
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fDate :
10/1/1992 12:00:00 AM
Abstract :
The statistical properties of the impulse response function of double-carrier multiplication avalanche photodiodes (APDs) are determined, including the effect of dead space, i.e., the minimum distance that a newly generated carrier must travel in order to acquire sufficient energy to become capable of causing an impact ionization. Recurrence equations are derived for the first and second moments and the probability distribution function of a set of random variables that are related, in a deterministic way, to the random impulse response function of the APD. The equations are solved numerically to produce the mean impulse response, the standard deviation, and the signal-to-noise ratio (SNR), all as functions of time
Keywords :
avalanche photodiodes; statistical analysis; dead space; double-carrier multiplication avalanche photodiodes; first moments; impact ionization; impulse response function; minimum distance; newly generated carrier; probability distribution function; random impulse response function; random variables; recurrence equations; second moments; signal-to-noise ratio; statistical properties; Avalanche photodiodes; Difference equations; Impact ionization; Noise reduction; Probability distribution; Random variables; Signal to noise ratio; Space exploration; Space technology; Tail;
Journal_Title :
Lightwave Technology, Journal of
