Title :
CMOS photodetectors for correlation peak location
Author :
Turner, R.M. ; Johnson, K.M.
Author_Institution :
Optoelectron. Comput. Syst. Center, Colorado Univ., Boulder, CO, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
The design and operation of CMOS photodetectors for locating correlation peaks in an optical processor are discussed. The detectors, which are fabricated in silicon CMOS, employ analog position sensing and on-chip circuitry to sequentially find intensity peaks. Two test devices are described: a two element competitive array with 400 μm×180 μm 1-D sensors and a 400 μm×400 μm 2-D sensor. The 2-D sensor resolves beam displacements of 0.25 μm and the two-element competitive array demonstrates combined circuit and photodetector response times down to 20 μs.
Keywords :
CMOS integrated circuits; integrated optoelectronics; optical correlation; photodetectors; position measurement; 0.25 micron; 1-D sensors; 180 micron; 2-D sensor; 20 mus; 400 micron; CMOS photodetectors; Si; analog position sensing; beam displacements; intensity peaks; on-chip circuitry; optical processor; response times; sequential correlation peak location; silicon; two element competitive array; CMOS analog integrated circuits; CMOS process; Circuit testing; Detectors; Optical design; Optical sensors; Photodetectors; Sensor arrays; Sensor phenomena and characterization; Silicon;
Journal_Title :
Photonics Technology Letters, IEEE
