DocumentCode :
1078466
Title :
Silicon hall-effect power IC´s for brushless motors
Author :
Kanda, Yozo ; Migitaka, Masatoshi ; Yamamoto, Hiroshi ; Morozumi, Hiroshi ; Okabe, Takahiro ; Okazaki, Shun ; Okazaki, Shinji
Author_Institution :
Hamamatsu University School of Medicine, Hamamatsu, Japan
Volume :
29
Issue :
1
fYear :
1982
fDate :
1/1/1982 12:00:00 AM
Firstpage :
151
Lastpage :
154
Abstract :
The offset voltage which appears at the Hall electrodes in the absence of a magnetic field depends strongly on the mechanical stress. In order to reduce the effects of stress on the offset voltage, special wafer process and packaging techniques have been devised. A Hall device with a 
direction of current flow in the
direction of current flow in theKeywords :
Brushless motors; Electrodes; Laboratories; Magnetic fields; Packaging; Power integrated circuits; Signal processing; Silicon; Stress; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20673
Filename :
1482170
Link To Document :
