Title :
Thermomechanical Stresses Analysis of a Single Event Burnout Process
Author :
Tais, Carlos E. ; Romero, Eduardo ; Demarco, Gustavo L.
Author_Institution :
Fac. Regional Villa Maria, Univ. Tecnol. Nac., Villa Maria
fDate :
6/1/2009 12:00:00 AM
Abstract :
This work analyzes the thermal and mechanical effects arising in a power Diffusion Metal Oxide Semiconductor (DMOS) during a Single Event Burnout (SEB) process. For studying these effects we propose a more detailed simulation structure than the previously used by other authors, solving the mathematical models by means of the Finite Element Method. We use a cylindrical heat generation region, with 5 W, 10 W, 50 W and 100 W for emulating the thermal phenomena occurring during SEB processes, avoiding the complexity of the mathematical treatment of the ion-semiconductor interaction.
Keywords :
dislocations; finite element analysis; melting; power MOSFET; semiconductor device models; thermal stresses; thermomechanical treatment; cylindrical heat generation region; dislocations; electrical behavior; finite element method; ion-semiconductor interaction; mathematical treatment; melting; power diffusion metal oxide semiconductor; shear stress; single event burnout process; thermomechanical stresses analysis; Bipolar transistors; Charge carrier processes; Failure analysis; MOSFET circuits; Mathematical model; Plasma temperature; Substrates; Thermal stresses; Thermomechanical processes; Voltage; Radiation; Single Event Burnout; semiconductors; thermoelasticity;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2009.2016565
