DocumentCode
1078513
Title
Nitride-based flip-chip p-i-n photodiodes
Author
Ko, T.K. ; Chang, S.J. ; Su, Y.K. ; Chiou, Y.Z. ; Chang, C.S. ; Shei, S.C. ; Sheu, J.K. ; Lai, W.C. ; Lin, Y.C. ; Chen, W.S. ; Shen, C.F.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume
29
Issue
3
fYear
2006
Firstpage
483
Lastpage
487
Abstract
Nitride-based flip-chip p-i-n photodiodes were fabricated and characterized. It was found that we could achieve a small dark current of 5times10-10 A at -5 V and a large rejection ratio larger than three orders of magnitude. It was also found that the photodiodes only detect optical signals with wavelengths between 365 and 378 nm. Furthermore, it was found that peak responsivity occurs at around 370 nm with a value of 0.21 A/W at zero bias which corresponds to 70% external quantum efficiency
Keywords
flip-chip devices; p-i-n photodiodes; -5 V; 0.5 nA; 365 to 378 nm; GaN; large rejection ratio; nitride-based flip-chip; optical signal detection; p-i-n photodiodes; quantum efficiency; small dark current; Bonding; Dark current; Gallium nitride; Integrated circuit technology; Light emitting diodes; PIN photodiodes; Packaging; Semiconductor materials; Substrates; Wires; Band-pass; GaN; flip-chip; p-i-n; photodiodes;
fLanguage
English
Journal_Title
Advanced Packaging, IEEE Transactions on
Publisher
ieee
ISSN
1521-3323
Type
jour
DOI
10.1109/TADVP.2006.875072
Filename
1667867
Link To Document