DocumentCode
1078519
Title
Delay and Energy Analysis of SEU and SET-Tolerant Pipeline Latches and Flip-Flops
Author
Blum, Daniel R. ; Delgado-Frias, José G.
Author_Institution
Marvell Semicond., Corvallis, OR
Volume
56
Issue
3
fYear
2009
fDate
6/1/2009 12:00:00 AM
Firstpage
1618
Lastpage
1628
Abstract
In the presence of radiation, particle strikes can cause temporary signal errors in ICs. Particle strikes that directly affect memory are known as single event upsets (SEUs), while strikes that affect combinational logic and spread to memory are called single event transients (SETs). This paper focuses on SEU and SET-tolerant approaches to constructing pipeline latches and flip-flops. Level-sensitive latches, edge-triggered master-slave flip-flops, and pulse-triggered flip-flops comprise the pipeline memory classes considered in this paper. TPDICE basic cells are utilized to achieve fault-tolerance and transient bypass capability. A number of single-ended and differential structures are presented and evaluated with respect to performance, energy consumption, and complexity. In addition, the SEU and SET tolerance of these structures is demonstrated. All evaluations are based off simulations performed in 90 nm CMOS. Accompanying the above evaluations, this paper also addresses concerns of multiple bit upset (MBU) affecting these designs at the 90 nm technology node. Novel hardened-by-design techniques are introduced to address these concerns, and their effectiveness is quantified.
Keywords
CMOS integrated circuits; fault tolerance; flip-flops; nuclear electronics; pipelines; radiation effects; CMOS; delay; differential structures; energy analysis; energy consumption; fault-tolerance; flip-flops; hardened-by-design techniques; multiple bit upset; pipeline latches; pipeline memory; single event transients; single event upsets; single-ended structures; size 90 nm; transient bypass; triple path dual interlocked storage cell; CMOS technology; Delay; Energy consumption; Fault tolerance; Flip-flops; Logic; Master-slave; Performance evaluation; Pipelines; Single event upset; Hardened by design; multiple-bit upset; pipeline flip-flops; radiation effects; single-event transients; single-event upsets;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2009.2019590
Filename
5075969
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