• DocumentCode
    1078519
  • Title

    Delay and Energy Analysis of SEU and SET-Tolerant Pipeline Latches and Flip-Flops

  • Author

    Blum, Daniel R. ; Delgado-Frias, José G.

  • Author_Institution
    Marvell Semicond., Corvallis, OR
  • Volume
    56
  • Issue
    3
  • fYear
    2009
  • fDate
    6/1/2009 12:00:00 AM
  • Firstpage
    1618
  • Lastpage
    1628
  • Abstract
    In the presence of radiation, particle strikes can cause temporary signal errors in ICs. Particle strikes that directly affect memory are known as single event upsets (SEUs), while strikes that affect combinational logic and spread to memory are called single event transients (SETs). This paper focuses on SEU and SET-tolerant approaches to constructing pipeline latches and flip-flops. Level-sensitive latches, edge-triggered master-slave flip-flops, and pulse-triggered flip-flops comprise the pipeline memory classes considered in this paper. TPDICE basic cells are utilized to achieve fault-tolerance and transient bypass capability. A number of single-ended and differential structures are presented and evaluated with respect to performance, energy consumption, and complexity. In addition, the SEU and SET tolerance of these structures is demonstrated. All evaluations are based off simulations performed in 90 nm CMOS. Accompanying the above evaluations, this paper also addresses concerns of multiple bit upset (MBU) affecting these designs at the 90 nm technology node. Novel hardened-by-design techniques are introduced to address these concerns, and their effectiveness is quantified.
  • Keywords
    CMOS integrated circuits; fault tolerance; flip-flops; nuclear electronics; pipelines; radiation effects; CMOS; delay; differential structures; energy analysis; energy consumption; fault-tolerance; flip-flops; hardened-by-design techniques; multiple bit upset; pipeline latches; pipeline memory; single event transients; single event upsets; single-ended structures; size 90 nm; transient bypass; triple path dual interlocked storage cell; CMOS technology; Delay; Energy consumption; Fault tolerance; Flip-flops; Logic; Master-slave; Performance evaluation; Pipelines; Single event upset; Hardened by design; multiple-bit upset; pipeline flip-flops; radiation effects; single-event transients; single-event upsets;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2009.2019590
  • Filename
    5075969