Title :
A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures
Author :
Bandyopadhyay, A. ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Calcutta Univ., India
fDate :
10/1/1992 12:00:00 AM
Abstract :
A theoretical study of the phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 μm. is reported. The carrier-induced effects (plasma, band filling, and many body) and the field-induced effects (linear electrooptic and electro-refractive) are considered to calculate the change in the refractive index. Both structures made of InGaAsP/InP show higher modulation efficiency than the corresponding structures made of GaAs/AlGaAs in almost all the cases considered due to a larger index change in InGaAsP as its bandgap wavelength is closer to both 1.3 and 1.55 μm
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguides; p-n homojunctions; phase modulation; refractive index; 1.3 micron; 1.55 micron; GaAs-AlGaAs; IR; InGaAsP-InP; band filling; bandgap wavelength; carrier-induced effects; double heterostructure waveguides; electro-refractive; field-induced effects; larger index change; linear electrooptic; many body; modulation efficiency; p-i-n structures; p-p-n-n structures; phase modulation; plasma; refractive index; semiconductors; Absorption; DH-HEMTs; Gallium arsenide; Indium phosphide; Optical switches; Optical waveguides; PIN photodiodes; Phase modulation; Refractive index; Waveguide theory;
Journal_Title :
Lightwave Technology, Journal of
