A comparative study of phase modulation in InGaAsP/InP and GaAs/AlGaAs based p-i-n and p-p-n-n structures

Author

Bandyopadhyay, A. ; Basu, P.K.

Author_Institution

Inst. of Radio Phys. & Electron., Calcutta Univ., India

Volume

10

Issue

10

fYear

1992

fDate

10/1/1992 12:00:00 AM

Firstpage

1438

Lastpage

1442

Abstract

A theoretical study of the phase modulation in InGaAsP/InP and GaAs/AlGaAs double heterostructure waveguides in the p-i-n and p-p-n-n configurations at wavelengths of 1.3 and 1.55 μm. is reported. The carrier-induced effects (plasma, band filling, and many body) and the field-induced effects (linear electrooptic and electro-refractive) are considered to calculate the change in the refractive index. Both structures made of InGaAsP/InP show higher modulation efficiency than the corresponding structures made of GaAs/AlGaAs in almost all the cases considered due to a larger index change in InGaAsP as its bandgap wavelength is closer to both 1.3 and 1.55 μm

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguides; p-n homojunctions; phase modulation; refractive index; 1.3 micron; 1.55 micron; GaAs-AlGaAs; IR; InGaAsP-InP; band filling; bandgap wavelength; carrier-induced effects; double heterostructure waveguides; electro-refractive; field-induced effects; larger index change; linear electrooptic; many body; modulation efficiency; p-i-n structures; p-p-n-n structures; phase modulation; plasma; refractive index; semiconductors; Absorption; DH-HEMTs; Gallium arsenide; Indium phosphide; Optical switches; Optical waveguides; PIN photodiodes; Phase modulation; Refractive index; Waveguide theory;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.166787

Filename

166787