Short-channel MOSFET VT-VDScharacteristics model based on a point charge and its mirror images

Author

Ohno, Yasuo

Author_Institution

Nippon Electric Co., Ltd., Kawasaki, Japan

Volume

29

Issue

2

fYear

1982

fDate

2/1/1982 12:00:00 AM

Firstpage

211

Lastpage

216

Abstract

Short-channel MOS transistor $dV_{T}/dV_{DS}$ characteristics are expressed by an analytic function of fundamental device parameters. The expression is derived from a simple model of short-channel MOS transistors in threshold condition, which is based on a point charge and its mirror images. With this expression, $dV_{T}/dV_{DS}$ is found to be proportional to $1/L^{2}-1/L^{4}$ , where $L$ is channel length. Following factors are also found, wherein the source and drain junction depth effect is only logarithmic on $dV_{T}/dV_{DS}$ characteristics, $dV_{T}/dV_{SUB}$ and $dV_{T}/dV_{DS}$ are closely related in short-channel MOS transistors, and short-channel effects are expected to be smaller in MOS transistors on SOS than on bulk silicon, due to a large number of Si/sapphire interface states. This model is simple, and it can be applied to short-channel MOS transistor designing and circuit simulations.

Keywords

Circuit simulation; DVD; Fabrication; Image analysis; Interface states; Large scale integration; MOSFET circuits; Mirrors; Silicon; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1982.20686

Filename

1482183