DocumentCode
1078644
Title
Novel low-loss and high-speed diode utilizing an "Ideal" ohmic contact
Author
Amemiya, Yoshihito ; Sugeta, Takayuki ; Mizushima, Yoshihiko
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
29
Issue
2
fYear
1982
fDate
2/1/1982 12:00:00 AM
Firstpage
236
Lastpage
243
Abstract
A novel electrode structure to realize an "ideal" ohmic contact is proposed. A new kind of low-loss and high-speed diode (LLD) is realized by utilizing this electrode structure. LLD shows a remarkably fast recovery as a Schottky diode, using no gold doping, while the reverse blocking voltage and operating temperature limit are far higher than for a Schottky diode. LLD is easily incorporated into monolithic combination with transistors, and is useful for various power applications.
Keywords
Doping; Electrodes; Gold; Ohmic contacts; Power semiconductor switches; Rectifiers; Schottky diodes; Semiconductor diodes; Temperature; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20690
Filename
1482187
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