• DocumentCode
    1078728
  • Title

    Electron and hole mobilities in silicon as a function of concentration and temperature

  • Author

    Arora, Narain D. ; Hauser, John R. ; Roulston, David J.

  • Author_Institution
    North Carolina State University, Raleigh, NC
  • Volume
    29
  • Issue
    2
  • fYear
    1982
  • fDate
    2/1/1982 12:00:00 AM
  • Firstpage
    292
  • Lastpage
    295
  • Abstract
    An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to \\sim 10^{20} cm-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
  • Keywords
    Charge carrier processes; Electron mobility; Helium; Impurities; Lattices; Light scattering; Physics; Silicon; Solid state circuits; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20698
  • Filename
    1482195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1078728