DocumentCode :
1078728
Title :
Electron and hole mobilities in silicon as a function of concentration and temperature
Author :
Arora, Narain D. ; Hauser, John R. ; Roulston, David J.
Author_Institution :
North Carolina State University, Raleigh, NC
Volume :
29
Issue :
2
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
292
Lastpage :
295
Abstract :
An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility. The resulting expression allows one to obtain electron and hole mobility as a function of concentration up to 
cm-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
cm-3in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.Keywords :
Charge carrier processes; Electron mobility; Helium; Impurities; Lattices; Light scattering; Physics; Silicon; Solid state circuits; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20698
Filename :
1482195
Link To Document :
