DocumentCode :
1078800
Title :
Verification of the equivalent circuit of a channel-collector transistor by two-dimensional numerical simulation
Author :
Zipperian, Thomas E.
Author_Institution :
Sandia National Laboratories, Albuquerque, NM
Volume :
29
Issue :
2
fYear :
1982
fDate :
2/1/1982 12:00:00 AM
Firstpage :
344
Lastpage :
346
Abstract :
Two-dimensional numerical simulation has been used to qualitatively verify that the collector region of a Channel-Collector Transistor (CCT) functions simultaneously as the collector of a conventional bipolar junction transistor (BJT) and the channel region of a junction field-effect transistor (JFET). Numerical simulation also confirmed that the collector region may be modeled as two JFET´s in series, with the second being fully merged with other regions of the device.
Keywords :
Charge carrier processes; Equivalent circuits; FETs; Numerical models; Numerical simulation; Poisson equations; Radiative recombination; Semiconductor process modeling; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20706
Filename :
1482203
Link To Document :
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