Title :
Verification of the equivalent circuit of a channel-collector transistor by two-dimensional numerical simulation
Author :
Zipperian, Thomas E.
Author_Institution :
Sandia National Laboratories, Albuquerque, NM
fDate :
2/1/1982 12:00:00 AM
Abstract :
Two-dimensional numerical simulation has been used to qualitatively verify that the collector region of a Channel-Collector Transistor (CCT) functions simultaneously as the collector of a conventional bipolar junction transistor (BJT) and the channel region of a junction field-effect transistor (JFET). Numerical simulation also confirmed that the collector region may be modeled as two JFET´s in series, with the second being fully merged with other regions of the device.
Keywords :
Charge carrier processes; Equivalent circuits; FETs; Numerical models; Numerical simulation; Poisson equations; Radiative recombination; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20706