DocumentCode
1078847
Title
Capture and escape in quantum wells as scattering events in Monte Carlo simulation
Author
Abou-Khalil, Michel ; Goano, Michele ; Champagne, Alain ; Maciejk, Roman
Author_Institution
Dept. de Genie Phys., Ecole Polytech. de Montreal, Que., Canada
Volume
8
Issue
1
fYear
1996
Firstpage
19
Lastpage
21
Abstract
The capture and escape in quantum wells are considered as scattering events in Monte Carlo simulation. Explicit expressions are derived for these interaction rates which depend on carrier initial energy. The expressions are applied to calculate the electron overall capture time in a GRINSCH quantum well at 300 K.
Keywords
Monte Carlo methods; electron traps; gradient index optics; semiconductor quantum wells; 300 K; GRINSCH quantum well; Monte Carlo simulation; capture; carrier scattering; escape; Carrier confinement; Electrons; Energy capture; Energy states; Monte Carlo methods; Optical scattering; Particle scattering; Phonons; Quantum well devices;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.475764
Filename
475764
Link To Document