• DocumentCode
    1078847
  • Title

    Capture and escape in quantum wells as scattering events in Monte Carlo simulation

  • Author

    Abou-Khalil, Michel ; Goano, Michele ; Champagne, Alain ; Maciejk, Roman

  • Author_Institution
    Dept. de Genie Phys., Ecole Polytech. de Montreal, Que., Canada
  • Volume
    8
  • Issue
    1
  • fYear
    1996
  • Firstpage
    19
  • Lastpage
    21
  • Abstract
    The capture and escape in quantum wells are considered as scattering events in Monte Carlo simulation. Explicit expressions are derived for these interaction rates which depend on carrier initial energy. The expressions are applied to calculate the electron overall capture time in a GRINSCH quantum well at 300 K.
  • Keywords
    Monte Carlo methods; electron traps; gradient index optics; semiconductor quantum wells; 300 K; GRINSCH quantum well; Monte Carlo simulation; capture; carrier scattering; escape; Carrier confinement; Electrons; Energy capture; Energy states; Monte Carlo methods; Optical scattering; Particle scattering; Phonons; Quantum well devices;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.475764
  • Filename
    475764