Title :
Locking characteristics of a passively mode-locked monolithic DBR laser stabilized by optical injection
Author :
Ahmed, Z. ; Liu, H.F. ; Novak, D. ; Ogawa, Y. ; Pelusi, M.D. ; Kim, D.Y.
Author_Institution :
Dept. of Electr. & Electron. Eng., Melbourne Univ., Parkville, Vic., Australia
Abstract :
We demonstrate the generation of ultrastable millimeter-wave carriers from a passively mode-locked monolithic InGaAs MQW DBR laser injection locked by a double sideband suppressed carrier modulated optical signal. We investigate the effect of the optical power and the wavelength of the injection signal on the phase noise of the generated millimeter-wave carrier. Once locked, the laser can track the variations in the beat frequency of the injected millimeter-wave signal over an RF frequency range of approximately 172 MHz.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; laser mode locking; laser noise; laser stability; millimetre wave lasers; optical modulation; phase noise; quantum well lasers; InGaAs; RF frequency range; beat frequency; double sideband suppressed carrier modulated optical signal; injected millimeter-wave signal; injection signal wavelength effects; locking characteristics; millimeter-wave carrier; monolithic InGaAs MQW DBR laser injection locking; optical injection; optical power; passively mode-locked; passively mode-locked monolithic DBR laser stabilised; phase noise; ultrastable millimeter-wave carriers; Distributed Bragg reflectors; Frequency; Indium gallium arsenide; Laser mode locking; Laser noise; Laser stability; Optical modulation; Optical noise; Quantum well devices; Signal generators;
Journal_Title :
Photonics Technology Letters, IEEE
