DocumentCode :
107902
Title :
Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs
Author :
Dasgupta, S. ; Rajashekhar, A. ; Majumdar, K. ; Agrawal, N. ; Razavieh, A. ; Trolier-Mckinstry, S. ; Datta, S.
Author_Institution :
Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA
Volume :
1
fYear :
2015
fDate :
Dec. 2015
Firstpage :
43
Lastpage :
48
Abstract :
Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion ( 
100 
). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau–Devonshire theory and the Landau–Khalatnikov equation.
Keywords :
Capacitance; Field effect transistors; Hafnium compounds; Iron; Lead; Logic gates; Silicon; Ferroelectric (FE) field-effect transistor (FET); Ferroelectric FET; Lead Zirconate Titanate; Negative Capacitance; Sub-kT/q Switching; lead zirconate titanate; negative capacitance (NC); sub-kT/q switching;
fLanguage :
English
Journal_Title :
Exploratory Solid-State Computational Devices and Circuits, IEEE Journal on
Publisher :
ieee
ISSN :
2329-9231
Type :
jour
DOI :
10.1109/JXCDC.2015.2448414
Filename :
7130555
Link To Document :
