Fabrication and analysis of high-contrast InGaAsP-InP Mach-Zehnder modulators for use at 1.55-μm wavelength

Author

Fetterman, M. ; Chao, C.P. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

8

Issue

1

fYear

1996

Firstpage

69

Lastpage

71

Abstract

A high-contrast ratio, low voltage-length product, multiple quantum well InGaAsP-InP Mach-Zehnder interferometer is demonstrated and analyzed. An on/off ratio of over 40 dB and voltage-length product of 1.8 V-mm were measured, results which are superior to previous reports of similar MQW structures. Using the Lanczos-Helmholtz beam propagation method, we find that the linear and quadratic electrooptic coefficients for InGaAsP quantum wells are r=(3.9/spl plusmn/1.7) pm/V and s=(5.0/spl plusmn/1.5)/spl times/10/sup -19/ m/sup 2//V/sup 2/, respectively. We also demonstrate active optical alignment of the modulator guides using integrated waveguide light emitting diodes.

Keywords

III-V semiconductors; Mach-Zehnder interferometers; electro-optical modulation; gallium arsenide; indium compounds; integrated optics; optical fabrication; semiconductor quantum wells; 1.55 mum; InGaAsP-InP; InGaAsP-InP Mach-Zehnder modulators; Lanczos-Helmholtz beam propagation method; active optical alignment; high-contrast ratio; integrated waveguide light emitting diodes; linear electrooptic coefficients; low voltage-length product; multiple quantum well InGaAsP-InP Mach-Zehnder interferometer; on/off ratio; quadratic electrooptic coefficients; voltage-length product; Fabrication; Integrated optics; Low voltage; Optical interferometry; Optical modulation; Optical propagation; Optical waveguides; Quantum well devices; Stimulated emission; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.475781

Filename

475781