Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors

Author

Hargis, M.C. ; Ralph, S.E. ; Woodall, J. ; McInturff, D. ; Negri, A.J. ; Haugsjaa, P.O.

Author_Institution

Dept. of Phys., Emory Univ., Atlanta, GA, USA

Volume

8

Issue

1

fYear

1996

Firstpage

110

Lastpage

112

Abstract

We report dramatic differences in the impulse response and wavelength dependence of back versus top illuminated In/sub 0.53/Ga/sub 0.47/As planar metal-semiconductor-metal devices. Via direct measurement of transit-time limited devices we identify the mechanisms involved and thereby allow the optimum design of multi-Gbit, high responsivity back-illuminated devices. We show that responsivities greater than 0.8 A/W are achievable with >8 GHz bandwidth for 50-μm-diameter devices.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical planar waveguides; optical waveguide components; optimisation; photodetectors; transient response; 50 mum; 8 GHz; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As planar metal-semiconductor-metal devices; InGaAs metal-semiconductor-metal photodetectors; back illuminated; back-illuminated; high responsivity back-illuminated devices; impulse response; spectral characteristics; temporal characteristics; top illuminated; transit-time limited devices; wavelength dependence; Bandwidth; Capacitance; Indium gallium arsenide; Lighting; Optical fiber cables; Optical fiber devices; PIN photodiodes; Photodetectors; Substrates; Voltage;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.475795

Filename

475795