• DocumentCode
    1079294
  • Title

    Two-dimensional nature of diffused layers and certain limitations in scaling-down coplanar structure

  • Author

    Iwai, Hiroshi ; Taniguchi, Kenji ; Konaka, Masami ; Maeda, Satoshi ; Nishi, Yoshio

  • Author_Institution
    Toshiba Corporation, Kawasaki, Japan
  • Volume
    29
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    625
  • Lastpage
    630
  • Abstract
    Limitation of the coplanar technology to geometry miniaturization has been investigated. Two-dimensional nature of diffused line capacitance in a coplanar structure is investigated for the first time delineating importance of the sidewall capacitance with decreasing feature size of devices. The effects of field channel-stop ion implantation on the narrow-channel effect, the field MOS threshold voltage, and the junction breakdown voltage are also discussed.
  • Keywords
    Boron; Capacitance measurement; Fabrication; Integrated circuit interconnections; Ion implantation; MOSFETs; Parasitic capacitance; Semiconductor device measurement; Testing; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20754
  • Filename
    1482251
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1079294