Title :
Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions
Author :
Simoen, Eddy ; Gonzalez, Mireia Bargallo ; Vissouvanadin, Bertrand ; Chowdhury, M.K. ; Verheyen, Peter ; Hikavyy, Andriy ; Bender, H. ; Loo, Roger ; Claeys, Cor ; Machkaoutsan, Vladimir ; Tomasini, P. ; Thomas, S. ; Lu, J.P. ; Weijtmans, J.W. ; Wise, R.
Author_Institution :
Interuniversity Microelectron. Centre, Leuven
fDate :
3/1/2008 12:00:00 AM
Abstract :
This paper studies the leakage current components in embedded Si1-x,Gex, source/drain (S/D) p+-n junctions, with different Ge contents, varying between 20% and 35%. In addition, the impact of performing a highly doped drain (HDD) implantation before or after the selective epitaxial deposition of in situ highly B-doped S/D layers is investigated. It is shown that the lowest junction leakage is obtained for the post-epi HDD condition, and moreover, for the smallest active area size. As pointed out, this dependence is related with a window-size-dependent strain relaxation, induced by the ion-implantation-related defects.
Keywords :
Ge-Si alloys; ion implantation; leakage currents; p-n junctions; relaxation; semiconductor doping; B-doped S/D layers; Si1-xGex; SiGe source/drain junctions; epitaxial deposition; highly doped drain implantation; ion-implantation-related defects; junction leakage; leakage current components; source/drain p+-n junctions; window-size-dependent strain relaxation; Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Leakage current; Microelectronics; Scalability; Semiconductor materials; Silicon germanium; Uniaxial strain; Embedded source/drain (S/D) junctions; SiGe; ion-implantation-induced defect formation; leakage current; strain engineering; strain relaxation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.914843
