Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions

Author

Simoen, Eddy ; Gonzalez, Mireia Bargallo ; Vissouvanadin, Bertrand ; Chowdhury, M.K. ; Verheyen, Peter ; Hikavyy, Andriy ; Bender, H. ; Loo, Roger ; Claeys, Cor ; Machkaoutsan, Vladimir ; Tomasini, P. ; Thomas, S. ; Lu, J.P. ; Weijtmans, J.W. ; Wise, R.

Author_Institution

Interuniversity Microelectron. Centre, Leuven

Volume

55

Issue

3

fYear

2008

fDate

3/1/2008 12:00:00 AM

Firstpage

925

Lastpage

930

Abstract

This paper studies the leakage current components in embedded Si_1-x,Ge_x, source/drain (S/D) p⁺-n junctions, with different Ge contents, varying between 20% and 35%. In addition, the impact of performing a highly doped drain (HDD) implantation before or after the selective epitaxial deposition of in situ highly B-doped S/D layers is investigated. It is shown that the lowest junction leakage is obtained for the post-epi HDD condition, and moreover, for the smallest active area size. As pointed out, this dependence is related with a window-size-dependent strain relaxation, induced by the ion-implantation-related defects.

Keywords

Ge-Si alloys; ion implantation; leakage currents; p-n junctions; relaxation; semiconductor doping; B-doped S/D layers; Si_1-xGe_x; SiGe source/drain junctions; epitaxial deposition; highly doped drain implantation; ion-implantation-related defects; junction leakage; leakage current components; source/drain p⁺-n junctions; window-size-dependent strain relaxation; Capacitive sensors; Epitaxial growth; Etching; Germanium silicon alloys; Leakage current; Microelectronics; Scalability; Semiconductor materials; Silicon germanium; Uniaxial strain; Embedded source/drain (S/D) junctions; SiGe; ion-implantation-induced defect formation; leakage current; strain engineering; strain relaxation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.914843

Filename

4455794