Scaling limitations of monolithic polycrystalline-Silicon resistors in VLSI static RAM´s and logic

Quantitative design criteria for monolithic polycrystalline-silicon resistors are established from physical models to develop an optimal device design. Based on the results, the parameters that limit the scaling of polysilicon resistors are identified, and a first-order estimation of minimum device dimensions is projected. The impact of this scaling on the performance of VLSI static RAM´s and logic is analyzed in terms of chip area, power, sensitivity to radiation, rise time, voltage swing, and noise margin. Based on constant-power scaling rules, resistor scaling is limited by the permissible nonlinearity dictated primarily by maximum rise time and sensitivity to radiation. After constant-field scaling, the speed-power product is improved; however, the circuits have less noise margin and voltage swing and become more sensitive to radiation.