DocumentCode :
1079442
Title :
Programming mechanism of polysilicon resistor fuses
Author :
Greve, David W.
Author_Institution :
Signetics Corporation, Sunnyvale, CA
Volume :
29
Issue :
4
fYear :
1982
fDate :
4/1/1982 12:00:00 AM
Firstpage :
719
Lastpage :
724
Abstract :
The programming characteristics of polysilicon resistor fuses were investigated. It was found that an open circuit occurs only after the fuse makes a transition to a second-breakdown state in which the current flow is mainly through a molten filament. Filamentary current flow is stable since the resistivity of silicon decreases abruptly upon melting. A simple model was developed which explains the observed I - V characteristics. Fuse opening occurs when the current in second breakdown exceeds a critical current Iminwhich depends strongly on the fuse thickness and the presence or absence of a passivation layer over the fuse. The gap forms at the positive end, suggesting that the silicon ions move by drift in the applied electric field.
Keywords :
Circuits; Contact resistance; Electric breakdown; Fuses; Power dissipation; Resistors; Silicon; Temperature; Thermal conductivity; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20768
Filename :
1482265
Link To Document :
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