• DocumentCode
    1079442
  • Title

    Programming mechanism of polysilicon resistor fuses

  • Author

    Greve, David W.

  • Author_Institution
    Signetics Corporation, Sunnyvale, CA
  • Volume
    29
  • Issue
    4
  • fYear
    1982
  • fDate
    4/1/1982 12:00:00 AM
  • Firstpage
    719
  • Lastpage
    724
  • Abstract
    The programming characteristics of polysilicon resistor fuses were investigated. It was found that an open circuit occurs only after the fuse makes a transition to a second-breakdown state in which the current flow is mainly through a molten filament. Filamentary current flow is stable since the resistivity of silicon decreases abruptly upon melting. A simple model was developed which explains the observed I - V characteristics. Fuse opening occurs when the current in second breakdown exceeds a critical current Iminwhich depends strongly on the fuse thickness and the presence or absence of a passivation layer over the fuse. The gap forms at the positive end, suggesting that the silicon ions move by drift in the applied electric field.
  • Keywords
    Circuits; Contact resistance; Electric breakdown; Fuses; Power dissipation; Resistors; Silicon; Temperature; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20768
  • Filename
    1482265