Title :
Laser annealing of low dose ion-implanted silicon and analysis by photoacoustic spectroscopy
Author :
McFarlane, R. ; Hess, Laura
Author_Institution :
Hughes Research Laboratories, Malibu, CA, USA
fDate :
9/1/1979 12:00:00 AM
Keywords :
Amorphous semiconductor materials/devices; Heat treatment; Laser applications, materials processing; Amorphous materials; Annealing; Backscatter; Chemical lasers; Crystallization; Gallium arsenide; Optical materials; Semiconductor lasers; Silicon; Spectroscopy;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1979.1070301
