DocumentCode :
1079529
Title :
Laser annealing of ion implantation damage in semiconductors with KrF excimer laser radiation
Author :
Hess, Laura
Author_Institution :
Hughes Research Labs., Malibu, CA, USA
Volume :
15
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
990
Lastpage :
990
Keywords :
Laser applications, materials processing; Annealing; Backscatter; Chemical lasers; Crystalline materials; Crystallization; Gallium arsenide; Ion implantation; Optical materials; Semiconductor lasers; Silicon;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1979.1070302
Filename :
1070302
Link To Document :
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