Title :
Laser annealing of ion implant damage in semiconductors
Author_Institution :
Bell Telephone Laboratories, Murray Hill, NJ
fDate :
9/1/1979 12:00:00 AM
Keywords :
Heat treatment; Laser applications, materials processing; Semiconductor defects; Amorphous silicon; Annealing; Implants; Laboratories; Laser beams; Laser modes; Pulsed laser deposition; Semiconductor lasers; Solid lasers; Telephony;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1979.1070306
