DocumentCode
1079587
Title
Buried-channel GaAs MESFET´s on MBE material: Scattering parameters and intermodulation signal distortion
Author
Beneking, Heinz ; Cho, Alfred Y. ; Dekkers, Jozef J M ; Morkoç, Hadis
Author_Institution
Aachen Technical University, Aachen, Federal Republic of Germany
Volume
29
Issue
5
fYear
1982
fDate
5/1/1982 12:00:00 AM
Firstpage
811
Lastpage
813
Abstract
Buried-channel GaAs MESFET´s (BFET´s) on MBE material have been fabricated. The bias dependence of the scattering parameters is strongly reduced applying the BFET principle. As a result the third-order intermodulation products are the smallest reported thus far,-45 dBm at an input power level of 8 dBm. These data are compared with those of VPE fabricated devices. The technology as well as the fabrication of the MBE layers is described.
Keywords
Epitaxial layers; Gallium arsenide; Intermodulation distortion; MESFETs; Metallization; Molecular beam epitaxial growth; Noise figure; Scattering parameters; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20782
Filename
1482279
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