DocumentCode
1079629
Title
The size effect of liftoff metallization of sputtered aluminum films
Author
Serikawa, Tadashi ; Sakurai, Tetsuma
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
29
Issue
5
fYear
1982
fDate
5/1/1982 12:00:00 AM
Firstpage
834
Lastpage
837
Abstract
Liftoff metallization of sputtered aluminum films successfully produces small patterns with tapered sidewalls. In this metallization, a size effect occurs wherein pattern height is influenced by pattern width. This article reports experiments regarding size effect dependences on liftoff parameters of pattern width, film thickness, photoresist thickness, and sputtering argon pressure. The size effect is favorably suppressed by reducting photoresist thickness and sputtering argon pressure. In addition, the effect is discussed by a model taking into account shadowing of sputtered atoms due to photoresist patterns and aluminum film itself deposited on the photoresist patterns.
Keywords
Aluminum; Argon; Extraterrestrial measurements; Metallization; Resists; Scanning electron microscopy; Silicon; Sputtering; Substrates; Ultrasonic variables measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20786
Filename
1482283
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