• DocumentCode
    1079629
  • Title

    The size effect of liftoff metallization of sputtered aluminum films

  • Author

    Serikawa, Tadashi ; Sakurai, Tetsuma

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    29
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    834
  • Lastpage
    837
  • Abstract
    Liftoff metallization of sputtered aluminum films successfully produces small patterns with tapered sidewalls. In this metallization, a size effect occurs wherein pattern height is influenced by pattern width. This article reports experiments regarding size effect dependences on liftoff parameters of pattern width, film thickness, photoresist thickness, and sputtering argon pressure. The size effect is favorably suppressed by reducting photoresist thickness and sputtering argon pressure. In addition, the effect is discussed by a model taking into account shadowing of sputtered atoms due to photoresist patterns and aluminum film itself deposited on the photoresist patterns.
  • Keywords
    Aluminum; Argon; Extraterrestrial measurements; Metallization; Resists; Scanning electron microscopy; Silicon; Sputtering; Substrates; Ultrasonic variables measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20786
  • Filename
    1482283