DocumentCode :
1079805
Title :
The DC current—Voltage characteristics of diodes under high-injection conditions
Author :
Mertens, Robert P. ; Nijs, Johan F. ; Van Overstraeten, Roger J. ; Jain, S.C.
Author_Institution :
Katholieke Universiteit Leuven, Heverlee, Belgium
Volume :
29
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
922
Lastpage :
928
Abstract :
The (J-V) characteristics of n+-p-p+diodes operating under high injection are calculated using a simplified analysis which is in very good agreement with an exact numerical calculation. The analysis is restricted to the case of negligible recombination in the lowly doped base. It is demonstrated that at high injection the commonly used approximation 
is not valid if the current results from both electron and hole flow.
is not valid if the current results from both electron and hole flow.Keywords :
Charge carrier processes; Current-voltage characteristics; Doping profiles; Employee welfare; Helium; Nonlinear equations; P-i-n diodes; Quasi-doping; Spontaneous emission; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20801
Filename :
1482298
Link To Document :
