DocumentCode
1079847
Title
Near ballistic transport in a nonparabolic-band structure for n- and p-GaAs
Author
Lee, Johnson ; Su, C.B.
Author_Institution
GTE Laboratories, Inc., Waltham, MA
Volume
29
Issue
5
fYear
1982
fDate
5/1/1982 12:00:00 AM
Firstpage
933
Lastpage
935
Abstract
The effects of intervalley scattering and conduction-band nonparabolicity are incorporated into calculations of the one-dimensional Poisson´s equation. The I-V chaxactetistic is obtained for n+-n--n+and n+-p--n+structures, respectively, by assuming ohmic contacts without spillover effects. The dominant effect for the current deviation from pure ballistic behavior is intervalley transfer.
Keywords
Ballistic transport; Degradation; Electrons; Feedback; Gears; Klystrons; Satellites; Scattering; Torque; Tuners;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20805
Filename
1482302
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