DocumentCode :
1079847
Title :
Near ballistic transport in a nonparabolic-band structure for n- and p-GaAs
Author :
Lee, Johnson ; Su, C.B.
Author_Institution :
GTE Laboratories, Inc., Waltham, MA
Volume :
29
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
933
Lastpage :
935
Abstract :
The effects of intervalley scattering and conduction-band nonparabolicity are incorporated into calculations of the one-dimensional Poisson´s equation. The I-V chaxactetistic is obtained for n+-n--n+and n+-p--n+structures, respectively, by assuming ohmic contacts without spillover effects. The dominant effect for the current deviation from pure ballistic behavior is intervalley transfer.
Keywords :
Ballistic transport; Degradation; Electrons; Feedback; Gears; Klystrons; Satellites; Scattering; Torque; Tuners;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20805
Filename :
1482302
Link To Document :
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