DocumentCode
1079893
Title
Compact modeling of the noise of a bipolar transistor under DC and AC current crowding conditions
Author
Paasschens, Jeroen C J
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
Volume
51
Issue
9
fYear
2004
Firstpage
1483
Lastpage
1495
Abstract
The effect of current crowding on dc, on ac, and in particular on the noise characteristic of bipolar transistors, is studied. An equivalent circuit able to model these effects is presented. General formulations to calculate current crowding in arbitrary geometries are derived. Both rectangular and circular geometries are discussed in detail.
Keywords
bipolar transistors; current density; equivalent circuits; semiconductor device breakdown; semiconductor device models; semiconductor device noise; AC current crowding conditions; DC current crowding conditions; analog simulation; bipolar transistor; compact modeling; equivalent circuit; noise characteristic; Bipolar transistors; Circuit noise; Circuit simulation; Equivalent circuits; Geometry; Noise figure; Noise measurement; Predictive models; Proximity effect; Radio frequency; Analog simulation; bipolar transistors; current crowding; equivalent circuits; noise; spice;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2004.833580
Filename
1325854
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