Title :
Compact modeling of the noise of a bipolar transistor under DC and AC current crowding conditions
Author :
Paasschens, Jeroen C J
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
The effect of current crowding on dc, on ac, and in particular on the noise characteristic of bipolar transistors, is studied. An equivalent circuit able to model these effects is presented. General formulations to calculate current crowding in arbitrary geometries are derived. Both rectangular and circular geometries are discussed in detail.
Keywords :
bipolar transistors; current density; equivalent circuits; semiconductor device breakdown; semiconductor device models; semiconductor device noise; AC current crowding conditions; DC current crowding conditions; analog simulation; bipolar transistor; compact modeling; equivalent circuit; noise characteristic; Bipolar transistors; Circuit noise; Circuit simulation; Equivalent circuits; Geometry; Noise figure; Noise measurement; Predictive models; Proximity effect; Radio frequency; Analog simulation; bipolar transistors; current crowding; equivalent circuits; noise; spice;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.833580
