DocumentCode :
1079910
Title :
Power semiconductor switching devices—A comparison based on inductive switching
Author :
Adler, Michael S. ; Westbrook, Scott R.
Author_Institution :
General Electric Company, Schenectady, NY
Volume :
29
Issue :
6
fYear :
1982
fDate :
6/1/1982 12:00:00 AM
Firstpage :
947
Lastpage :
952
Abstract :
In this paper, a comparison of the switching efficiency of MOSFET´s Darlington transistors, field controlled thyristors (FCT´s), and gate turn-off thyristors (GTO´s) will be made for devices with breakdown voltages between 100 and 1000 V. The comparison is made as a function of switching frequency with a 50-percent duty cycle and for devices of the same area, carrying the same current. Conclusions are presented as to the most appropriate device for different combinations of breakdown voltage and switching frequency requirements.
Keywords :
Electric variables control; MOSFET circuits; Motor drives; Power MOSFET; Power conversion; Power semiconductor switches; Switching frequency; Switching loss; Thyristors; Voltage control;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20811
Filename :
1482308
Link To Document :
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