Title :
MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD
Author :
Chen, X. ; Joshi, S. ; Chen, J. ; Ngai, T. ; Banerjee, S.K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Abstract :
We report the successful growth of MOS capacitor stacks with low temperature strained epitaxial Ge or Si1-xGex(x=0.9) layer directly on Si substrates, and with HfO2(EOT=9.7 Å) as high-κ dielectrics, both using a novel remote plasma-assisted chemical vapor deposition technique. These novel MOS capacitors, which were fabricated entirely at or below 400°C, exhibit normal capacitance-voltage and current-voltage characteristics.
Keywords :
MOS capacitors; plasma CVD; silicon compounds; 400 C; Ge-SiGe; HfO2; MOS capacitors; capacitance-voltage characteristic; current-voltage characteristics; high-κ dielectrics; remote plasma-assisted chemical vapor deposition; Dielectric measurements; Dielectric substrates; Dielectric thin films; Epitaxial layers; Hafnium oxide; MOS capacitors; Noise measurement; Plasma temperature; Plasma x-ray sources; Transmission electron microscopy; Ge-epi-on-Si; MOS; RPCVD; high-$kappa$ ; remote plasma-assisted chemical vapor deposition;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.833957
