• DocumentCode
    1079965
  • Title

    MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD

  • Author

    Chen, X. ; Joshi, S. ; Chen, J. ; Ngai, T. ; Banerjee, S.K.

  • Author_Institution
    Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
  • Volume
    51
  • Issue
    9
  • fYear
    2004
  • Firstpage
    1532
  • Lastpage
    1534
  • Abstract
    We report the successful growth of MOS capacitor stacks with low temperature strained epitaxial Ge or Si1-xGex(x=0.9) layer directly on Si substrates, and with HfO2(EOT=9.7 Å) as high-κ dielectrics, both using a novel remote plasma-assisted chemical vapor deposition technique. These novel MOS capacitors, which were fabricated entirely at or below 400°C, exhibit normal capacitance-voltage and current-voltage characteristics.
  • Keywords
    MOS capacitors; plasma CVD; silicon compounds; 400 C; Ge-SiGe; HfO2; MOS capacitors; capacitance-voltage characteristic; current-voltage characteristics; high-κ dielectrics; remote plasma-assisted chemical vapor deposition; Dielectric measurements; Dielectric substrates; Dielectric thin films; Epitaxial layers; Hafnium oxide; MOS capacitors; Noise measurement; Plasma temperature; Plasma x-ray sources; Transmission electron microscopy; Ge-epi-on-Si; MOS; RPCVD; high-$kappa$ ; remote plasma-assisted chemical vapor deposition;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2004.833957
  • Filename
    1325860
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1079965