DocumentCode :
1080003
Title :
Time-domain simulation analysis of avalanche photodetectors
Author :
Riad, Sedki M. ; Riad, Aicha A R
Author_Institution :
Virginia Polytechnic Institute, Blacksburg, VA
Volume :
29
Issue :
6
fYear :
1982
fDate :
6/1/1982 12:00:00 AM
Firstpage :
994
Lastpage :
998
Abstract :
The avalanche photodiode (APD) avalanche multiplication impulse response is evaluated by solving the time-varying rate equations in the time domain. The device simulation allows the motion of the carriers under the influence of the active region´s electric field. The inclusion of carder motion in the model replaces the undesired divergence terms which cause errors due to the numerical differentiation. An application is given to study the effect of the APD bias on the device multiplication impulse response and bandwidth.
Keywords :
Absorption; Analytical models; Avalanche photodiodes; Bandwidth; Differential equations; Diodes; Frequency response; Ionization; Photodetectors; Time domain analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20820
Filename :
1482317
Link To Document :
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