DocumentCode :
1080025
Title :
RF Sputtered gold-amorphous silicon Schottky-barrier diodes
Author :
Xu, Le ; Reinhard, Don K. ; Thompson, Mark G.
Author_Institution :
Michigan State University, East Lansing, MI
Volume :
29
Issue :
6
fYear :
1982
fDate :
6/1/1982 12:00:00 AM
Firstpage :
1004
Lastpage :
1008
Abstract :
Gold Schottky-barrier diodes formed on reactively sputtered amorphous silicon thin films have been investigated. Device forward 
characteristics are well modeled as a Schottky diode in series with a temperature activated series resistor. At 300K, the forward current indicates a diode correction factor of 1.4 and a saturation current of 5.8 × 10-10A/cm2. The metal-semiconductor barrier height is 0.93 eV. Capacitance versus frequency measurements indicate a depletion region thickness of 3000 Å. In the depletion region, the mobility-lifetime products are estimated to be of the order of 5 × 10-11cm2/V which is substantially less than the value of 10-7cm2/V in the quasi-neutral region, It is suggested that deep gap states are responsible for this difference. Carrier recombination in the depletion region limits the photovoltaic performance.
characteristics are well modeled as a Schottky diode in series with a temperature activated series resistor. At 300K, the forward current indicates a diode correction factor of 1.4 and a saturation current of 5.8 × 10-10A/cm2. The metal-semiconductor barrier height is 0.93 eV. Capacitance versus frequency measurements indicate a depletion region thickness of 3000 Å. In the depletion region, the mobility-lifetime products are estimated to be of the order of 5 × 10-11cm2/V which is substantially less than the value of 10-7cm2/V in the quasi-neutral region, It is suggested that deep gap states are responsible for this difference. Carrier recombination in the depletion region limits the photovoltaic performance.Keywords :
Amorphous silicon; Capacitance; Frequency measurement; Gold; Radio frequency; Resistors; Schottky diodes; Semiconductor thin films; Sputtering; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20822
Filename :
1482319
Link To Document :
