DocumentCode
1080076
Title
The capacitance of a small circular Schottky diode for submillimeter wavelengths
Author
Louhi, Jyrki T.
Author_Institution
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
Volume
4
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
107
Lastpage
108
Abstract
The capacitance of a small-area circular submillimeter wave diode is strongly affected by the edge effect of the charged anode. The correction factor due to the edge effect cannot be obtained analytically and the capacitance of a circular diode must be calculated using numerical methods. In this work a new, numerically derived formula for the junction capacitance of a small circular diode is presented.<>
Keywords
Schottky-barrier diodes; capacitance; semiconductor device models; solid-state microwave devices; submillimetre wave devices; charged anode; correction factor; edge effect; junction capacitance; numerical methods; numerically derived formula; small circular Schottky diode; small-area diode; submillimeter wavelengths; Anodes; Boundary conditions; Capacitance; Frequency; Laplace equations; Millimeter wave technology; Nonlinear equations; Schottky diodes; Semiconductor diodes; Voltage;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.282574
Filename
282574
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