Title :
The capacitance of a small circular Schottky diode for submillimeter wavelengths
Author_Institution :
Radio Lab., Helsinki Univ. of Technol., Espoo, Finland
fDate :
4/1/1994 12:00:00 AM
Abstract :
The capacitance of a small-area circular submillimeter wave diode is strongly affected by the edge effect of the charged anode. The correction factor due to the edge effect cannot be obtained analytically and the capacitance of a circular diode must be calculated using numerical methods. In this work a new, numerically derived formula for the junction capacitance of a small circular diode is presented.<>
Keywords :
Schottky-barrier diodes; capacitance; semiconductor device models; solid-state microwave devices; submillimetre wave devices; charged anode; correction factor; edge effect; junction capacitance; numerical methods; numerically derived formula; small circular Schottky diode; small-area diode; submillimeter wavelengths; Anodes; Boundary conditions; Capacitance; Frequency; Laplace equations; Millimeter wave technology; Nonlinear equations; Schottky diodes; Semiconductor diodes; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
