DocumentCode :
1080123
Title :
500-GHz characterization of an optoelectronic S-parameter test structure
Author :
Frankel, Michael Y.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
4
Issue :
4
fYear :
1994
fDate :
4/1/1994 12:00:00 AM
Firstpage :
118
Lastpage :
120
Abstract :
We propose a compact, high-bandwidth optoelectronic S-parameter test structure and characterize its performance via electrooptic sampling over a 500-GHz frequency range. The test structure is shown to be well-behaved over a 300-GHz bandwidth, with further improvement potential. Active devices can be wirebonded into the structure for characterization, or they can be integrated on-wafer for improved performance.<>
Keywords :
S-parameters; microwave measurement; optoelectronic devices; semiconductor device testing; solid-state microwave devices; submillimetre wave devices; test equipment; 300 GHz; 500 GHz; 500-GHz characterization; active device wirebonding; electrooptic sampling; high-bandwidth; on-wafer integration; optoelectronic S-parameter test structure; Attenuation; Bandwidth; Frequency; Personal communication networks; Pulse generation; Pulse measurements; Scattering parameters; Testing; Transmission line discontinuities; Transmission line measurements;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.282578
Filename :
282578
Link To Document :
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