• DocumentCode
    1080151
  • Title

    Backgating in GaAs MESFET´s

  • Author

    Kocot, Christopher ; Stolte, Charles A.

  • Author_Institution
    Hewlett-Packard Laboratories, Palo Alto, CA
  • Volume
    29
  • Issue
    7
  • fYear
    1982
  • fDate
    7/1/1982 12:00:00 AM
  • Firstpage
    1059
  • Lastpage
    1064
  • Abstract
    The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron trapping on the Cr2+and EL(2) levels at the semi-insulating substrate-channel region interface. A model describing backgating, based on DLTS and spectral measurements, is presented. Calculations based on this model predict that closely compensated substrate material will minimize backgating. Preliminary experimental data support this prediction.
  • Keywords
    Buffer layers; Capacitance; Chromium; Electron traps; Energy states; Gallium arsenide; Helium; Lattices; MESFETs; Predictive models;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20834
  • Filename
    1482331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080151