InP-In1-xGaxAsyP1-yembedded mesa stripe lasers

Author

Prince, Francisco C. ; Patel, Navin B. ; Bull, Douglas J.

Author_Institution

Instituto de Física, Sao Paulo, Brazil

Volume

16

Issue

10

fYear

1980

fDate

10/1/1980 12:00:00 AM

Firstpage

1034

Lastpage

1038

Abstract

A laser structure was fabricated using two-step liquid-phase epitaxy, employing the melt-back technique. The fabrication and properties of this structure are described in detail. Good linearity of the power output up to power levels of 20 mW was obtained. The threshold current density at 300 K is 9-12 kA/cm². This high value is mainly due to Zn-diffusion from the third to the buffer layer during the second growth step of the fabrication process. The external differential quantum efficiency is 30-35 percent under pulsed operation at 25°C. The pulsed threshold current has an exponential behavior with temperature where $T_{0} = 60\\deg$ C. The far-field beam divergences in the directions parallel and perpendicular to the junction plane are $12-15\\deg$ and $35-40\\deg$ , respectively. Transverse mode stabilization was improved with this laser structure.

Keywords

Gallium materials/lasers; Boats; Doping; Gallium arsenide; Indium phosphide; Laser modes; Optical design; Optical materials; Refractive index; Substrates; Surface morphology;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.1980.1070357

Filename

1070357