DocumentCode :
1080156
Title :
InP-In1-x Gax Asy P1-y embedded mesa stripe lasers
Author :
Prince, Francisco C. ; Patel, Navin B. ; Bull, Douglas J.
Author_Institution :
Instituto de Física, Sao Paulo, Brazil
Volume :
16
Issue :
10
fYear :
1980
fDate :
10/1/1980 12:00:00 AM
Firstpage :
1034
Lastpage :
1038
Abstract :
A laser structure was fabricated using two-step liquid-phase epitaxy, employing the melt-back technique. The fabrication and properties of this structure are described in detail. Good linearity of the power output up to power levels of 20 mW was obtained. The threshold current density at 300 K is 9-12 kA/cm2. This high value is mainly due to Zn-diffusion from the third to the buffer layer during the second growth step of the fabrication process. The external differential quantum efficiency is 30-35 percent under pulsed operation at 25°C. The pulsed threshold current has an exponential behavior with temperature where 
C. The far-field beam divergences in the directions parallel and perpendicular to the junction plane are 
and 
, respectively. Transverse mode stabilization was improved with this laser structure.
C. The far-field beam divergences in the directions parallel and perpendicular to the junction plane are and , respectively. Transverse mode stabilization was improved with this laser structure.Keywords :
Gallium materials/lasers; Boats; Doping; Gallium arsenide; Indium phosphide; Laser modes; Optical design; Optical materials; Refractive index; Substrates; Surface morphology;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1980.1070357
Filename :
1070357
Link To Document :
