DocumentCode :
1080340
Title :
v-E dependence in small-sized MOS transistors
Author :
Leburton, Jeanpierre ; Dorda, Gerhard E.
Author_Institution :
University of Illinois, Urbana, IL, USA
Volume :
29
Issue :
8
fYear :
1982
fDate :
8/1/1982 12:00:00 AM
Firstpage :
1168
Lastpage :
1171
Abstract :
It is demonstrated that the hyperbolic relation for the v-E dependence which is usually used in transistor modeling, does not hold in short-channel MOSFET\´s ( 
µm). A new v-E relation is proposed, which is a surface modification of the Scharfetter-Gummel formula and which takes into account the pronounced role of warm electrons. The analysis shows that the lateral electric field at the source determines the transport properties in the channel. A comparison of theoretical results with experimental data is given.
µm). A new v-E relation is proposed, which is a surface modification of the Scharfetter-Gummel formula and which takes into account the pronounced role of warm electrons. The analysis shows that the lateral electric field at the source determines the transport properties in the channel. A comparison of theoretical results with experimental data is given.Keywords :
Curve fitting; Electron mobility; Equations; FETs; Helium; Laboratories; MOS devices; MOSFETs; Very large scale integration; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20852
Filename :
1482349
Link To Document :
