Title :
Selfaligned InGaAs/InP heterostructure bipolar transistors
Author :
Feygenson, A. ; Temkin, H. ; Tsang, W.T. ; Yang, L. ; Yadvish, R.D. ; Scortino, P.F.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/20/1991 12:00:00 AM
Abstract :
InGaAs/InP heterostructure bipolar transistors have been realised using a new selfaligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j=1.5*10-4 A/cm2 to 1.5 A/cm2.
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; CBE; HBT; InGaAs-InP; chemical beam epitaxy; device fabrication; heterostructure bipolar transistors; selfaligned process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910697
