Title :
Three-dimensional analysis of multiquantum well DFB lasers
Author_Institution :
Bell-Northern Res. Ltd., Ottawa, Ont., Canada
fDate :
6/20/1991 12:00:00 AM
Abstract :
A three-dimensional analysis is presented by using the transfer-matrix method for 1.55 mu m InGaAs BH MQW DFB lasers. It is shown that the coupling coefficient becomes maximum and the threshold current density becomes minimum at a certain number of wells, depending on the stripe width.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser theory; laser transitions; semiconductor junction lasers; BH MQW laser; DFB lasers; InGaAs; coupling coefficient; multiquantum well; semiconductor lasers; stripe width; three-dimensional analysis; threshold current density; transfer-matrix method;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910698
