Effect of thermionic electron emission from the active layer on the internal quantum efficiency of InGaAsP lasers operating at 1.3 μm

Author

Andrekson, P.A. ; Kazarinov, R.F. ; Olsson, N.A. ; Tanbun-Ek, T. ; Logan, R.A.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

219

Lastpage

221

Abstract

We have experimentally characterized the quantum efficiency in InGaAsP lasers operating at 1.3 μm. The observed reduction in external quantum efficiency with increasing temperature and increasing bias current is found to be caused almost entirely by a reduction of the internal quantum efficiency. The internal quantum efficiency is reduced approximately linearly with bias current in the temperature range investigated. The experimental results are well explained with a theoretical model based on thermionic emission of carriers out of the active region

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; semiconductor lasers; thermionic electron emission; 1.3 mum; InGaAsP; InGaAsP lasers; active layer o; active region; increasing bias current; increasing temperature; internal quantum efficiency; temperature range; thermionic electron emission; Current measurement; Electron emission; Heating; Laser modes; Laser theory; Linear approximation; Optical materials; Quantum well lasers; Temperature distribution; Thermionic emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283762

Filename

283762